Simulation of channelled ion ranges in crystalline silicon

Kabadayi O., Gumus H.

RADIATION PHYSICS AND CHEMISTRY, vol.69, no.5, pp.367-372, 2004 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 69 Issue: 5
  • Publication Date: 2004
  • Doi Number: 10.1016/j.radphyschem.2003.10.007
  • Journal Name: RADIATION PHYSICS AND CHEMISTRY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.367-372
  • Keywords: channelling, ion implantation, silicon, simulation, ELECTRONIC STOPPING POWER, PROJECTED RANGE, HE IONS, SOLIDS, SI
  • Ondokuz Mayıs University Affiliated: No

Abstract

We present results from a channelled ion range simulation model based on separation of ion trajectories into three different categories known as random, channelled, and well-channelled. We present this for boron projectiles incident along the Si <100> direction. Stopping powers for channelled particles, well-channelled, and random particles are determined using experimental ratios of random and channelled stopping powers for a boron/silicon system. We have found the particle range distributions and the mean range of particles in crystalline channels. A new program code has been developed for the implementation of the presented model. The results are compared with experimental data as well as Crystal-transport and range of ions in matter, stopping and ranges of ions in matter, and projected range algorithm programs. We have found good agreement between Our calculations and experiment, with an average discrepancy of 7%. Our model is also able to Simulate the observed shift towards larger depths for the main ion distribution under channelling conditions. (C) 2003 Elsevier Ltd. All rights reserved.