Thickness Optimization of AlN Thin Films Deposited By RF Magnetron Sputtering

Uzgur S., Hutson D., Kirk K.

21st IEEE ISAF, held Jointly with 11th ECAPD and 4th Conference on PFM and Nanoscale Phenomena in Polar Materials, Aveiro, Portekiz, 9 - 13 Temmuz 2012, (Tam Metin Bildiri) identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/isaf.2012.6297867
  • Basıldığı Şehir: Aveiro
  • Basıldığı Ülke: Portekiz
  • Anahtar Kelimeler: AlN thin films, MEMS, DoE, Crystallographic structure
  • Ondokuz Mayıs Üniversitesi Adresli: Evet

Özet

Aluminium nitride (AlN) which has a wurtzite crystal structure is highly suitable material for applications in a wide range field of ultrasonic transducers, non-destructive testing and MEMS- Micro- Electro- Mechanical Systems because of AlN's good piezoelectric properties.