21st IEEE ISAF, held Jointly with 11th ECAPD and 4th Conference on PFM and Nanoscale Phenomena in Polar Materials, Aveiro, Portugal, 9 - 13 July 2012
Conference Paper / Full Text
AlN thin films, MEMS, DoE, Crystallographic structure
Ondokuz Mayıs University Affiliated:
Aluminium nitride (AlN) which has a wurtzite crystal structure is highly suitable material for applications in a wide range field of ultrasonic transducers, non-destructive testing and MEMS- Micro- Electro- Mechanical Systems because of AlN's good piezoelectric properties.