Thickness Optimization of AlN Thin Films Deposited By RF Magnetron Sputtering

Uzgur S., Hutson D., Kirk K.

21st IEEE ISAF, held Jointly with 11th ECAPD and 4th Conference on PFM and Nanoscale Phenomena in Polar Materials, Aveiro, Portugal, 9 - 13 July 2012 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/isaf.2012.6297867
  • City: Aveiro
  • Country: Portugal
  • Keywords: AlN thin films, MEMS, DoE, Crystallographic structure
  • Ondokuz Mayıs University Affiliated: Yes


Aluminium nitride (AlN) which has a wurtzite crystal structure is highly suitable material for applications in a wide range field of ultrasonic transducers, non-destructive testing and MEMS- Micro- Electro- Mechanical Systems because of AlN's good piezoelectric properties.