The channeled stopping powers of Boron ions and range calculations in Si

Kabadayi O.

CZECHOSLOVAK JOURNAL OF PHYSICS, vol.54, no.4, pp.461-468, 2004 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 54 Issue: 4
  • Publication Date: 2004
  • Doi Number: 10.1023/b:cjop.0000020584.39889.b8
  • Journal Name: CZECHOSLOVAK JOURNAL OF PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED)
  • Page Numbers: pp.461-468
  • Keywords: silicon, channeling, ion ranges, PROJECTED RANGE, ALGORITHM, IMPLANTATION, SILICON, SOLIDS
  • Ondokuz Mayıs University Affiliated: No

Abstract

An analytical fitting expression is obtained for the channeled stopping power of B ions in crystalline silicon. Ions incident in the Si (100) direction at energies from 50 keV/amu to 900 keV/amu are considered. The mean projected ranges of ions have been determined within the framework of the transport theory formalism where the fitting relation obtained for the stopping power was used. For this purpose, a first order ordinary differential equation including second order stopping coefficients is solved numerically by using Fehlberg fourth-fifth order Runge-Kutta method. By using the results for the channeled ion ranges, a transformation relation is proposed for the conversion of channeled/random ion ranges for the ion target system under consideration. The obtained results are compared with widely used standard programs such as Crystal-TRIM, SRIM and PRAL and our program applied to crystalline targets is in good agreement with Crystal-TRIM.