The channeled stopping powers of Boron ions and range calculations in Si

Kabadayi Ö.

CZECHOSLOVAK JOURNAL OF PHYSICS, cilt.54, sa.4, ss.461-468, 2004 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 54 Sayı: 4
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1023/b:cjop.0000020584.39889.b8
  • Dergi Adı: CZECHOSLOVAK JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.461-468
  • Anahtar Kelimeler: silicon, channeling, ion ranges, PROJECTED RANGE, ALGORITHM, IMPLANTATION, SILICON, SOLIDS
  • Ondokuz Mayıs Üniversitesi Adresli: Hayır

Özet

An analytical fitting expression is obtained for the channeled stopping power of B ions in crystalline silicon. Ions incident in the Si (100) direction at energies from 50 keV/amu to 900 keV/amu are considered. The mean projected ranges of ions have been determined within the framework of the transport theory formalism where the fitting relation obtained for the stopping power was used. For this purpose, a first order ordinary differential equation including second order stopping coefficients is solved numerically by using Fehlberg fourth-fifth order Runge-Kutta method. By using the results for the channeled ion ranges, a transformation relation is proposed for the conversion of channeled/random ion ranges for the ion target system under consideration. The obtained results are compared with widely used standard programs such as Crystal-TRIM, SRIM and PRAL and our program applied to crystalline targets is in good agreement with Crystal-TRIM.