Electron transport in solids at keV energies: Improved Monte Carlo simulation of backscattering and absorption phenomena


Moussaoui O., Bentabet A., Kahoul A., Betka A., Grar N., Gumus H., ...Daha Fazla

Micron, cilt.205, 2026 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 205
  • Basım Tarihi: 2026
  • Doi Numarası: 10.1016/j.micron.2026.104044
  • Dergi Adı: Micron
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, BIOSIS, Compendex, EMBASE, INSPEC, MEDLINE, Zoological Record
  • Anahtar Kelimeler: Backscattering coefficient, Electron, Monte Carlo simulation, Stopping profile
  • Ondokuz Mayıs Üniversitesi Adresli: Evet

Özet

Monte Carlo simulations are performed to investigate the interaction of 1–10 keV electron beams with semi-infinite solid targets, focusing on absorption and backscattering transport phenomena. We provide through this study a comprehensive estimation of a variety of essential parameters such as mean penetration depths, range, stopping profiles and backscattering coefficients for targets of carbon (C), silicon (Si), aluminum (Al), copper (Cu), germanium (Ge), palladium (Pd), silver (Ag), platinum (Pt) and gold (Au). To enrich the work, we simultaneously used the Penelope code and the dielectric model during our calculations. A new fitting function is proposed to describe the stopping profiles achieving a significant improvement in the precision of electron transport simulations. Both the analytical and simulated results show good agreement with the experiment and previous theoretical work.